Radiation damage of Ge-on-Si devices

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 217-220

  Ohyama, H ^a   Sakamoto, K ^a   Sukizaki, H ^a   Takakura, K ^a   Hayama, K ^a   Motoki, M ^a   Matsuo, K ^a   Nakamura, H ^b   Sawada, M ^c   Midorikawa, M ^d   Kuboyama, S ^d   De Jaeger, B ^e   Simoen, E ^e   Claeys, C ^e,f  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b Tokyo Cathode Laboratory Co Ltd   (Japan)

^c Hanwa Electronics Ind Co Ltd   (Japan)

^d JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^e IMEC   (Belgium)

^f UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Degradation; Electron; Ge diode; Ge transistor; Irradiation; Proton; Radiation damage

Indexed keywords

2-MEV ELECTRON; FORWARD CURRENTS; FORWARD VOLTAGE; GE DIODE; GE TRANSISTOR; INPUT AND OUTPUTS; LATTICE DEFECTS; NEGATIVE SHIFT; P-CHANNEL MOS; P-MOSFETS; POSITIVE CHARGES; SI DEVICES; SI SUBSTRATES; TRANSISTOR PERFORMANCE;

DEGRADATION; DIODES; DRAIN CURRENT; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; IRRADIATION; LEAKAGE (FLUID); MOSFET DEVICES; PROTONS; RADIATION; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; TRANSISTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70349769919     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.08.001     Document Type: Article

References (5)

1. Moskalyk R.R. Miner Eng 17 (2004) 393
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3. Claeys C., and Simoen E. Germanium-based technologies vol. 7 (2007), Elsevier, Amsterdam
4. Nicholas G., et al. High-performance deep submicron Ge pMOSFETs with halo impants. IEEE-TED 54 (2007) 2503
5. x epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons. IEEE-TNS 42 (1995) 1550