Total ionizing dose effects on Ge pMOSFETs with high-k Gate Stack: On/Off Current Ratio

IEEE Transactions on Nuclear Science

Volumn 56, Issue 4, 2009, Pages 1926-1930

  Kulkarni, S R ^a   Schrimpf, R D ^a   Galloway, K F ^a   Arora, Rajun ^a   Claeys, Cor ^b,c   Simoen, Eddy ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Germanium transistor; High k gate stack; Junction leakage current; On off current ratio; P channel MOSFET; Radiation effects; Surface generation current; Total ionizing dose

Indexed keywords

GERMANIUM TRANSISTOR; HIGH-K GATE STACK; JUNCTION LEAKAGE CURRENT; ON/OFF CURRENT RATIO; P-CHANNEL MOSFET; SURFACE GENERATION CURRENT; TOTAL IONIZING DOSE;

ELECTRIC POTENTIAL; GATE DIELECTRICS; GERMANIUM; IONIZING RADIATION; LEAKAGE CURRENTS; LOGIC GATES; MOSFET DEVICES; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

DRAIN CURRENT;

EID: 69549133833     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2015664     Document Type: Conference Paper

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