Interface study of insertion layers in organic semiconductor devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7415, Issue , 2009, Pages

  Ding, Huanjun ^a   Irfan, ^a   So, Franky ^b   Gao, Yongli ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Electronic structure; Insertion layer; Organic semiconductor; Photoemission

Indexed keywords

CATHODE MATERIALS; ELECTRON TRANSPORT LAYERS; ELECTRON-INJECTION BARRIER; ENERGY LEVEL SHIFT; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE INJECTION BARRIERS; HOLE TRANSPORT LAYERS; INSERTION LAYERS; INVERSE PHOTOEMISSION SPECTROSCOPY; METAL INSERTION; N-DOPED; ORGANIC BISTABLE DEVICE; ORGANIC SEMICONDUCTOR; ORGANIC SEMICONDUCTOR DEVICES; ORGANIC THIN FILM TRANSISTORS; THIN LAYERS; THIN METAL OXIDE; ULTRA-THIN; XPS;

ALKALI METALS; CATHODES; ELECTRON ENERGY LEVELS; ELECTRON INJECTION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; LIGHT EMISSION; METALLIC COMPOUNDS; METALS; MOLECULAR ORBITALS; PHOTOEMISSION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; THIN FILM TRANSISTORS; THIN FILMS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 77955765834     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.829333     Document Type: Conference Paper

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