Investigation of impact ionization in InAs-channel HEMT for high-speed and low-power applications

IEEE Electron Device Letters

Volumn 28, Issue 10, 2007, Pages 856-858

  Chang, Chia Yuan ^a   Hsu, Heng Tung ^b   Chang, Edward Yi ^a   Kuo, Chien I ^a   Datta, Suman ^c   Radosavljevic, Marko ^c   Miyamoto, Yasuyuki ^d   Huang, Guo Wei ^e  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b YUAN ZE UNIVERSITY   (Taiwan)

^c INTEL CORPORATION   (United States)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^e NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Gate delay time; High electron mobility transistors (HEMTs); Impact ionization; InAs channel

Indexed keywords

CUTOFF FREQUENCY; ELECTRIC CURRENTS; ELECTRON MOBILITY; ENERGY GAP; GATES (TRANSISTOR); IMPACT IONIZATION; SEMICONDUCTING INDIUM COMPOUNDS;

COMPOSITE CHANNEL; GATE DELAY TIME; LOW-POWER LOGIC APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34948852722     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.906083     Document Type: Article

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