Optimizationof a-plane (11̄2 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1̄1 02) sapphire

Journal of Crystal Growth

Volumn 312, Issue 14, 2010, Pages 2033-2037

  Laskar, Masihhur R ^a   Kadir, Abdul ^a   Rahman, A A ^a   Shah, A P ^a   Hatui, Nirupam ^a   Gokhale, M R ^a   Bhattacharya, Arnab ^a  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

A1. High resolution X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Indium nitride; B2. Semiconducting IIIV materials

Indexed keywords

A-PLANE; A-PLANE GAN; GROWTH PARAMETERS; HIGH RESOLUTION X RAY DIFFRACTION; IN-PLANE; INDIUM NITRIDE; INN FILMS; LOW TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; MORPHOLOGICAL PROPERTIES; MOSAICITY; MOVPE; OPTIMUM GROWTH CONDITIONS; OPTIMUM GROWTH TEMPERATURE; PHOTOLUMINESCENCE PEAK; REACTOR PRESSURES; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SCATTERING VECTORS; SEMI CONDUCTING III-V MATERIALS; SHOWERHEAD; SKEW-SYMMETRIC;

ANISOTROPY; BUFFER LAYERS; CARRIER CONCENTRATION; COUPLED CIRCUITS; ELECTRIC PROPERTIES; EPILAYERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PRESSURE EFFECTS; SAPPHIRE; VAPORS; X RAY DIFFRACTION;

SEMICONDUCTOR GROWTH;

EID: 77955678554     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.03.042     Document Type: Article

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