Theoretical study of Ni adsorption on the GaN(0 0 0 1) surface

Applied Surface Science

Volumn 256, Issue 22, 2010, Pages 6495-6498

  González Hernández, Rafael ^a,b   López, William ^a   Ortega, César ^c   Moreno Armenta, María Guadalupe ^d   Rodríguez, Jairo Arbey ^b  

^a UNIVERSIDAD DEL NORTE   (Colombia)

^b UNIVERSIDAD NACIONAL DE COLOMBIA   (Colombia)

^c UNIVERSIDAD DE CÓRDOBA   (Colombia)

^d UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

Chemisorption; Density functional calculations; Gallium nitride; Surface diffusion

Indexed keywords

ADATOMS; ADSORPTION; CALCULATIONS; CHEMISORPTION; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NICKEL; POTENTIAL ENERGY; QUANTUM CHEMISTRY; SURFACE DIFFUSION;

ADSORPTION ENERGIES; FIRST PRINCIPLES; NI ADSORPTIONS; NICKEL ADSORPTION; NICKEL SURFACES; PSEUDOPOTENTIALS; STRUCTURAL AND ELECTRONIC PROPERTIES; THEORETICAL STUDY;

DENSITY FUNCTIONAL THEORY;

EID: 77955663013     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.04.078     Document Type: Review

References (31)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama Appl. Phys. Lett. 67 1995 1868
2. H. Bar-Ilan, S. Zamir, O. Katz, B. Meyler, and J. Salzman Mater. Sci. Eng. A 302 2001 14
3. R.J. Trew, M.W. Shin, and V. Gatto Solid-State Electron. 41 1997 1561
4. C. Lung-Chien, H. Chin-Yuan, L. Wen-How, and T. Sheng-Yuan Solid-State Electron. 47 2003 1843
5. S. Nakamura, and G. Fasol The Blue Laser Diode 1997 Springer Berlin
6. A.V. Davydov, L.A. Bendersky, W.J. Boettinger, D. Josell, M.D. Vaudin, K.S. Chang, and I. Takeuchi Appl. Surf. Sci. 223 2004 24
7. S.V. Pettersen, A.P. Grande, T. Tybell, H. Riechert, R. Averbeck, and J.K. Grepstad Semicond. Sci. Technol. 22 2007 186
8. H.K. Cho, T. Hossain, J.W. Bae, and I. Adesida Solid-State Electron. 49 2005 774
9. H.K. Cho, S.K. Kim, and J.S. Lee J. Phys. D: Appl. Phys. 41 2008 175107
10. L.S. Chuah, Z. Hassan, and H. Abu Hassan J. Non-Cryst. Solids 356 2010 181
11. T. Zywietz, J. Neugebauer, and M. Scheffler Appl. Phys. Lett. 73 1998 487
12. Q.Z. Xue, Q.K. Xue, R.Z. Bakhtizin, Y. Hasegawa, I.S.T. Tsong, T. Sakurai, and T. Ohno Phys. Rev. B 59 1999 12604
13. V.M. Bermudez, R. Kaplan, M.A. Khan, and J.N. Kuznia Phys. Rev. B 48 1993 2436
14. S. Hao, and Z. Zhang Phys. Rev. Lett. 99 2007 166101
15. C. Ortega López, W. López Pérez, and J.A. Rodriguez Appl. Surf. Sci. 255 6 2009 3837
16. R. Gonzalez-Hernandez, W. Lopez-Pérez, M.G. Moreno-Armenta, J.A. Rodriguez, Phys. Rev. B., in press.
17. J.P. Perdew, K. Burke, and M. Ernzerhof Phys. Rev. Lett. 77 1996 3865
18. K. Laasonen, A. Pasquarello, R. Car, C. Lee, and D. Vanderbilt Phys. Rev. B. 47 1993 10142
19. P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G.L. Chiarotti, M. Cococcioni, I. Dabo, A. Dal Corso, S. de Gironcoli, and S. Fabris J. Phys.: Condens. Matter 21 2009 395502
20. H.J. Monkhorst, and J.D. Pack Phys. Rev. B 13 1976 5188
21. M. Methfessel, and A.T. Paxon Phys. Rev. B. 40 1989 3616
22. K. Kim, W.R.L. Lambrecht, and B. Segall Phys. Rev. B 53 1996 16310
23. C. Stampfl, and C.G. Van de Walle Phys. Rev. B 59 1999 5521
24. F.H. Wang, K. Peter, and P. Johannes Phys. Rev. B 64 2001 035305
25. M. Hong-Xia, H. Yan-Jun, S. Wei-Jin, Z. Xian-Peng, and L. Yi Chin. Phys. Lett. 23 2006 2299
26. I.M. Neklyudov, and A.N. Morozov Physica B 350 2004 325
27. E. Weinan, R. Weiqing, and E. Vanden-Eijnden Phys. Rev. B 66 2002 052301
28. N. Takeuchi, A. Selloni, T.H. Myers, and A. Doolittle Phys. Rev. B. 72 2005 115307
29. A.C. Schmitz, A.T. Ping, M.A. Khan, Q. Chen, J.W. Yang, and I. Adesida Semicond. Sci. Technol. 11 1996 1464
30. T. Zywietz, J. Neugebauer, M. Scheffler, J. Northrup, and C.G. Van de Walle MRS Internet J. Nitride Semicond. Res. 3 1998 26
31. E.D. Readinger, J.A. Robinson, S.E. Mohney, and R. Therrien Semicond. Sci. Technol. 20 2005 389