An improved non-alloyed ohmic contact Cr/Ni/Au to n-type GaN with surface treatment

Journal of Physics D: Applied Physics

Volumn 41, Issue 17, 2008, Pages

  Cho, Hyun Kyong ^a   Kim, Sun Kyung ^a   Lee, Jeong Soo ^b  

^a LG Innotek Co Ltd   (South Korea)

^b LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 54749126986     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/17/175107     Document Type: Article

References (13)

1. Wierer J J et al 2001 Appl. Phys. Lett. 78 3379
2. Fujii F, Gao Y, Sharma R, Hu E L, DenBaars S P and Nakamura S 2004 Appl. Phys. Lett. 84 855
3. Wong W S, Sands T, Cheung N W, Kneissl M, Bour D P, Mei P, Romando L T and Johnson N M 1999 Appl. Phys. Lett. 75 1360
4. Wong W S, Sands T, Cheung N W, Kneissl M, Bour D P, Mei P, Romando L T and Johnson N M 2000 Appl. Phys. Lett. 77 2822
5. Chen S-L, Wang S-J, Uang K-M, Chen T-M, Lee W-C and Liou B-W 2007 IEEE Photon. Technol. Lett. 19 351
6. Chen Y C et al 2003 Appl. Phys. Lett. 82 2221
7. Wierer J J, Krames M R, Epler J E, Gardner N F, Craford M G, Wendt J R, Simmons J A and Sigalas M M 2004 Appl. Phys. Lett. 84 3885
8. David A, Fujii T, Sharma R, Moran B, Nakamura S, DenBaars S P, Weisbush C and Benisty H 2006 Appl. Phys. Lett. 88 133514
9. Jang H W, Kim J K, Lee J-L, Schroeder J and Sands T 2003 Appl. Phys. Lett. 82 580
10. Su S-H, Hou C-C, Lin M-H, Yokoyama M, Chen S-M and Kuan H 2007 Japan. J. Appl. Phys. 46 965
11. Karrer U, Ambacher O and Stutzmann M 2000 Appl. Phys. Lett. 77 2012
12. Jang H W, Lee J-H and Lee J-L 2002 Appl. Phys. Lett. 80 3955
13. Osvald J, Kuzmik J, Konstantinidis G, Lobotka P and Georgakilas A 2005 Microelectron. Eng. 81 181