A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Eriguchi, K ^a   Nakakubo, Y ^a   Matsuda, A ^a   Kamei, M ^a   Ohta, H ^a   Nakagawa, H ^b   Hayashi, S ^b   Noda, S ^b   Ishikawa, K ^b   Yoshimaru, M ^b   Ono, K ^a  

^a KYOTO UNIVERSITY   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLASSICAL MOLECULAR DYNAMICS; ELECTRICAL METHODS; LATENT DEFECTS; MOSFET PERFORMANCE; MOSFETS; PERFORMANCE PREDICTIONS; PLASMA PROCESS; PLASMA-INDUCED;

DEFECT DENSITY; DYNAMICS; ELECTRON DEVICES; MOLECULAR DYNAMICS; MOSFET DEVICES;

PLASMAS;

EID: 64549101481     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796720     Document Type: Conference Paper

References (15)

1. T. Ohchi, et al., Jpn. J. Appl. Phys., 47, p. 5324 2008.
2. K. Eriguchi and K. Ono, J. Phys. D: Appl. Phys., 41, 024002, 2008.
3. X. C. Mu, S. J. Fonash, A. Rohatgi, and J. Rieger, Appl. Phys. Lett., 48, p. 1147, 1986.
4. K. Egashira, K. Eriguchi, and S. Hashimoto, IEDM Tech. Dig., p. 563, 1998.
5. K. Eriguchi, T. Imai, A. Asai, and M. Okuyama, Proc. of Int. Symp. Plasma Process-Induced Damage p. 215, 1997.
6. O. O. Awadelkarim, P. I. Mikulan, T. Gu, K. A. Reinhardt, and Y. D. Chan, J. Appl. Phys., 76, p. 2270, 1994.
7. H. Kokura, K. Okabe, M. Nakaishi, and M. Miyajima, Proc. of Symp. on Dry Process, p. 27, 2005.
8. N. Yabumoto, M. Oshima, O. Michikami, and S. Yoshii, Jpn. J. Appl. Phys., 20, p. 893, 1981.
9. G. S. Oehrlein, A. A. Bright, and S. W. Robey, J. Vac. Sci. & Technol. A6, p. 1989, 1988.
10. A. Kojima et al., Proc. of Symp. on Dry Process, p. 13, 2003.
11. Y. Nakakubo et al., Proc. Symp. Dry Process, p. 287, 2007.
12. H. Ohta and S. Hamaguchi, J. Vac. Sci. & Technol. A19, p. 2373, 2001.
13. K. Eriguchi et al., Jpn. J. Appl. Phys., 47, p. 2446, 2008.
14. A. M. Goodman, J. Appl. Phys., 34, p. 329, 1963.
15. Y. Osano et al., Jpn. J. Appl. Phys., 5, p. 8157, 2006.