SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 87, Issue 11, 2010, Pages 2358-2360

NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation

(2) Alptekin, Emre a Ozturk, Mehmet C a

a North Carolina State University (United States)

Author keywords

Contact esistivity; NixPt1 xSi; Nickel; NiSi; Platinum; PtSi; Schottky barrier height; Silicide; Sulfur

Indexed keywords

BARRIER HEIGHTS; CONTACT ESISTIVITY; N TYPE SILICON; NISI; SCHOTTKY BARRIER HEIGHTS; SULFUR SEGREGATION; THERMAL STABILITY;

NICKEL; NICKEL ALLOYS; PLATINUM; PLATINUM ALLOYS; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SILICON; SILICON ALLOYS; SULFUR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955517301 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.04.008 Document Type: Article

Times cited : (9)

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