Morphology transition of ZnO films with DMZn flow rate in MOCVD process

Applied Surface Science

Volumn 256, Issue 23, 2010, Pages 7305-7310

  Liang, J H ^a   Lai, H Y ^a   Chen, Y J ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

Growth mechanism; MOCVD; Transition zone; VI II ratio; Zinc oxide

Indexed keywords

ALUMINUM COMPOUNDS; FLOW RATE; II-VI SEMICONDUCTORS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANORODS; ORGANIC CHEMICALS; ORGANOMETALLICS; ZINC OXIDE;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); ALIGNED ZNO NANORODS; GROWTH MECHANISMS; MORPHOLOGY TRANSITIONS; TRANSITION ZONES; TRANSPORT MECHANISM; VI/II RATIO; ZINC PRECURSOR;

MAGNESIUM COMPOUNDS;

EID: 77955305594     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.05.070     Document Type: Article

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