Atmospheric pressure vapor-phase growth of ZnO using a chloride source

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 822-827

  Takahashi, Naoyuki ^a   Kaiya, Kazuhiko ^a   Omichi, Kouji ^a   Nakamura, Takato ^a   Okamoto, Shinji ^b   Yamamoto, Hajime ^c  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOTTORI UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CRYSTAL ORIENTATION; PARTIAL PRESSURE; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING FILMS;

EID: 0033900467     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00611-9     Document Type: Article

References (8)

1. Klingshirn C. Phys. Stat. Sol. B. 71:1975;547.
2. Bagnall D.M., Chen Y.F., Zhu Z.Q., Yao T., Koyama S., Shen M.Y., Goto T. Appl. Phys. Lett. 70:1997;2230.
3. Zu P., Tang Z.K., Wong G.K.L., Kawasaki M., Ohtomo A., Koinuma H., Segawa Y. J. Soild State Commun. 103:1997;459.
4. Chen Y.F., Bagnall D.M., Zhu Z.Q., Sekiuchi T., Park K., Hiraga K., Yao T., Koyama S., Shen M.Y., Goto T. J. Cryst. Growth. 181:1997;165.
5. Hayamizu S., Tabata H., Tanaka H., Kawai T. J. Appl. Phys. 80:1996;787.
6. Shiosaki T., Ohnishi S., Kawabata A. J. Appl. Phys. 50:1979;3113.
7. JCPDS File No. 36-1451, 1990.
8. Kadota M., Minakata M. Jpn. J. Appl. Phys. 37:1998;2929.