Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition

Thin Solid Films

Volumn 449, Issue 1-2, 2004, Pages 12-19

  Zhang, B P ^a,b   Wakatsuki, K ^a,b   Binh, N T ^a   Usami, N ^c   Segawa, Y ^a,b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Al2O3; Film; Growth model; Lattice mismatch; MOCVD; MOVPE; Photoluminescence; Rod; Surface morphology; X Ray; ZnO

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SUBSTRATES; SURFACE PHENOMENA; THERMAL EFFECTS; ZINC OXIDE;

GROWTH MODELS; LATTICE MISMATCH; ROD;

THIN FILMS;

EID: 1242265535     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01466-4     Document Type: Article

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