Lithium doping and gate dielectric dependence study of solution-processed zinc-oxide thin-film transistors

Journal of the Society for Information Display

Volumn 18, Issue 8, 2010, Pages 552-557

  Nayak, Pradipta K ^a   Jang, Jongsu ^a   Lee, Changhee ^a   Hong, Yongtaek ^a  

^a Seoul National University   (South Korea)

Author keywords

Gate dielectric effects; Lithium doping; Performance; TFTs; ZnO

Indexed keywords

ALUMINUM TITANIUMS; BI-LAYER; C-AXIS ORIENTATIONS; CRYSTALLINE FORM; CRYSTALLIZATION BEHAVIOR; DIELECTRIC EFFECTS; DIELECTRIC STUDIES; DIELECTRIC SURFACE; DOPED ZNO; DOPING CONCENTRATION; FIELD-EFFECT MOBILITIES; LITHIUM DOPING; SOLUTION-PROCESSED; ZNO; ZNO FILMS;

AMORPHOUS FILMS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); FILM PREPARATION; GATE DIELECTRICS; GATES (TRANSISTOR); LITHIUM; METALLIC FILMS; SILICON NITRIDE; TITANIUM; TITANIUM OXIDES; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77955299397     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID18.8.552     Document Type: Conference Paper

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