Growth of hexagonal and cubic InN nanowires using MOCVD with different growth temperatures

Journal of Crystal Growth

Volumn 312, Issue 15, 2010, Pages 2201-2205

  Yun, Seok Hyo ^a   Ra, Yong Ho ^a   Lee, Young Min ^a   Song, Ki Young ^a   Cha, Jun Ho ^a   Lim, Hong Chul ^a   Kim, Dong Wook ^a   Suthan Kissinger, N J ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

A1. Nanostructures; A3. MOCVD; B1. Nitrides; B2. Semiconducting IIIV materials

Indexed keywords

A3. MOCVD; B2. SEMICONDUCTING IIIV MATERIALS; HEXAGONAL AND CUBIC STRUCTURE; HIGH-RESOLUTION X-RAY DIFFRACTION; INN NANOWIRES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; NITROGEN AMBIENT; OPTIMUM GROWTH CONDITIONS; RAMAN MEASUREMENTS; RICH CONDITIONS; SEEDING LAYERS; SEM; SEMI CONDUCTING III-V MATERIALS; SI (1 1 1); WURTZITES;

GOLD; GROWTH TEMPERATURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; NITRIDES; ORGANIC CHEMICALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS; X RAY DIFFRACTION; ZINC SULFIDE;

SEMICONDUCTOR GROWTH;

EID: 77955273578     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.04.041     Document Type: Article

References (24)

1. S. Nakamura, S. Pearton, and G. Fasol Measure. Sci. Technol. 12 2001 755
2. F.H. Yang, J.S. Hwang, Y.J. Yang, K.H. Chen, and J.H. Wang Jpn. J. Appl. Phys. 41 2002 1321
3. Y. Nanishi, Y. Saito, and T. Yamaguchi Jpn. J. Appl. Phys. 42 2003 2549
4. M. Higashiwaki, and T. Matsui Jpn. J. Appl. Phys. 41 2002 540
5. J. Zhang, L. Zhang, X. Peng, and X. Wang J. Mater. Chem. 12 2002 802
6. C.H. Liang, L.C. Chen, J.S. Hwang, K.H. Chen, Y.T. Hung, and Y.F. Chen Appl. Phys. Lett. 81 2002 22
7. T. Tang, S. Han, W. Jin, X. Liu, C. Li, D. Zhang, C. Zhou, B. Chen, J. Han, and M. Meyappan J. Mater. Res. 19 2004 423
8. M.C. Johnson, C.J. Lee, E.D. Bourret-Courchesne, S.L. Konsek, S. Aloni, W.Q. Han, and A. Zettl Appl. Phys. Lett. 85 2004 5670
9. Z.H. Lan, W.M. Wang, C.L. Sun, S.C. Shi, C.W. Hsu, T.T. Chen, K.H. Chen, C.C. Chen, Y.F. Chen, and L.C. Chen J. Cryst. Growth 269 2004 87
10. L.W. Yin, Y. Bando, D. Goldberg, and M.S. Li Adv. Mater. 16 2004 1833
11. K. Sardar, F.L. Deepak, A. Govindaraj, M.M. Seik, and C.N.R. Rao Small 1 2005 91
12. H. Parala, A. Devi, F. Hipler, E. Maile, A. Birkner, H.W. Becker, and R.A. Fischer J. Cryst. Growth 231 2001 68
13. S. Vaddiraju, A. Mohite, A. Chin, M. Meyyappan, G. Sumanasekera, B.W. Alphenaar, and M.K. Sunkara Nano Lett. 5 2005 1625
14. L.E.J. Piper, T.D. Veal, C.F. McConville, Hai Lu, and Schaff Appl. Phys. Lett. 88 2006 252109
15. B.A. Weinstein, P. Perlin, N.E. Christensen, I. Gorezyka, V. Iota, T. Suski, P. Wisniewski, M. Osinski, and P.G. Eliseev Solid State Commun. 106 1998 567
16. M.C. Johnson, C.J. Lee, E.D. Bourret-Courchesne, S.L. Konsek, S. Aloni, W.Q. Han, and A. Zettl Appl. Phys. Lett. 85 2004 5670
17. V. Cimalla, J. Pezoldt, G. Ecke, R. Kosiba, O. Ambacher, L. Spieb, G. Teichert, H. Lu, and W.J. Schaff Appl. Phys. Lett. 83 2003 3468
18. E. Kurimoto, M. Hangyo, H. Harima, M. Yoshimoto, T. Yamaguchi, T. Araki, Y. Nanishi, and K. Kisoda Appl. Phys. Lett. 84 2004 212
19. X.M. Cai, K.Y. Cheung, A.B. Djurisic, and M.H. Xie Mater. Lett. 61 2007 1563
20. C. Shen, H. Chen, H. Lin, S. Gwo, A. Klochikhin, and V. Davydov Appl. Phys. Lett. 88 2006 253104
21. T. Richter, C. Blomers, H. Luth, R. Calarco, M. Indlekofer, M. Marso, and M.T. Schapers Nano Lett. 8 2008 2834
22. J.W. Chen, Y.F. Chen, H. Lu, and W.J. Schaff Appl. Phys. Lett. 87 2005 041907
23. Valery Davydov, A Klochikhin, S Ivanov, J Aderhold, and A Yamamoto Nitride Semiconductors: Handbook on Materials and Devices 2003 Wiley-VCH Germany pp. 280294
24. A.G. Bhuiyan, A. Hashimoto, and A. Yamamoto Appl. Phys. Lett. 94 2003 2779