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Applied Physics Letters

Volumn 96, Issue 6, 2010, Pages

Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures

(7) Gouy A a,b Berbezier, I a Favre, L a Amiard, G a Aouassa, M a Campidelli, Y b Halimaoui, A b

a AIX MARSEILLE UNIVERSITÉ (France)

b STMICROELECTRONICS (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; EXTENDED DEFECT; LOW TEMPERATURES; METAL OXIDE SEMICONDUCTOR STRUCTURES; MONOCRYSTALLINE; MOS STRUCTURE; SI SUBSTRATES; SOLID PHASE EPITAXY; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION; TRISILANES;

AMORPHOUS FILMS; CRYSTAL GROWTH; DIELECTRIC DEVICES; MOS DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SINGLE CRYSTALS; SOLAR RADIATION; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 76749131238 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3298354 Document Type: Article

Times cited : (6)

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