The effect of potassium on the rate of solid phase epitaxy in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 777-781

  Liu, A C Y ^a   McCallum, J C ^a   Deenapanray, P N K ^b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Amorphous silicon; Solid phase epitaxy

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CRYSTALLIZATION; DOPING (ADDITIVES); POTASSIUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

SOLID PHASE EPITAXY;

EPITAXIAL GROWTH;

EID: 0036569261     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01178-8     Document Type: Conference Paper

References (9)