Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 669-672

  Shih, S E ^a   Deal, W R ^a   Yamauchi, D ^a   Sutton, W E ^a   Chen, Y C ^a   Smorchkova, I ^a   Heying, B ^a   Wojtowicz, M ^a   Siddiqui, M ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Broadband amplifier; Dual gate HEMT; GaN HEMT; LNA; Low noise amplifier

Indexed keywords

ALGAN/GAN HEMTS; DESIGN AND ANALYSIS; DIFFERENT FREQUENCY; DRAIN BIAS; DUAL-GATE HEMT; FLAT-GAIN; GAN HEMT; GAN HEMTS; HIGH FREQUENCY; LOW FREQUENCY; MICROSTRIP AMPLIFIERS; MINIMUM NOISE FIGURE; ON CHIPS; RESISTIVE FEEDBACK; SINGLE STAGE; ULTRAWIDE BANDWIDTH;

AUDIO FREQUENCY AMPLIFIERS; FREQUENCY BANDS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INSULATING MATERIALS; LOW NOISE AMPLIFIERS; MICROWAVES; NOISE FIGURE;

BROADBAND AMPLIFIERS;

EID: 77949972978     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165785     Document Type: Conference Paper

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