High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 415-421

  Parikh, P ^a   Wu, Y ^a   Moore, M ^a   Chavarkar, P ^a   Mishra, U ^a   Neidhard, R ^b   Kehias, L ^b   Jenkins, T ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; SCANNING ELECTRON MICROSCOPY; SIGNAL RECEIVERS;

POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242302477     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. I. Adesida et. al., "Low Noise AlGaN/GaN HFETs", ONR Workshop on Physical Effects and Device/Circuit Interactions in Solid State Devices, Bar Harbor, September 2001.
2. N. Nguyen et. al.; "Robust Low Microwave Noise GaN MODFETs with 0. 60 dB Noise Figure at 10 GHz," Electron. Lett 36, pp. 469-70 (March 2000).
3. Y.-F. Wu et. al., "Bias dependent performance of high power AlGaN-GaN HEMTs", IEDM Digest, 2001.
4. S.E. Rosenbaum et. al.; "A 7 to 11 GHz AlInAs/GaInAs/InP MMIC LNA," IEEE MTT-S, pp 1103-1104, 1993.
5. Y.-F. Wu et al., "High Al-content AlGaN/GaN HEMTs on SiC substrates with very-high performance", IEDM Digest, 1999.