Linearity of low microwave noise AlGaN/GaN HEMTs

Electronics Letters

Volumn 38, Issue 22, 2002, Pages 1358-1359

  Moon, J S ^a   Micovic, M ^a   Kurdoghlian, A ^a   Janke, P ^a   Hashimoto, P ^a   Wong, W S ^a   McCray, L ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LINES; ELECTRIC POTENTIAL; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

MICROWAVE NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037168155     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020920     Document Type: Article

References (5)

1. Ngyuen, N.X., Micovic, M., Wong, W.-S., Hashimoto, P., Janke, E. Harvey, D., and Nguyen, C.: 'Robust low microwave noise GaN MODFETs with 0.6 dB noise figure at 10 GHz', Electron. Lett., 2000, 36, pp. 469-471.
2. Lu, W., Yang, J., Khan, M.A., and Adesida, I.: 'AIGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise', IEEE Trans. Electron. Devices, 2001, ED-48, pp. 581-585.
3. Green, B.M., Tilak, V., Lee, S.-J., Kim, H.-T., Smart, J.A., Webb, K.J., Shealy, J.R., and Eastman, L.E.: 'High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates', IEEE Trans. Microw. Theory Tech, 2001, 49, pp. 2486-2493.
4. Jenkins, T., Kehias, L., Parikh, P. Wu, Y.-E, Chavarkar, P., Moore, M., and Mishra, U.: 'Linearity of high Al-content AlGaN/GaN HEMTs'. IEEE Device Research Conf., Notre Dame, Indiana, USA, 2001, pp. 201-202.
5. Moon, J.S., Micovic, M., Janke, P., Hashimoto, P., Wong, W.-S., Widman, R.D., McCray, L.M., Kurdoghlian, A., and Nguyen, C.: 'GaN/AlGaN HEMTs operating at 20 GHz with continuous-wave power density > 6 W/mm', Electron. Lett., 2001, 37, pp. 528-530.