Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 12, 2010, Pages

  Jahn, U ^a   Brandt, O ^a   Luna, E ^a   Sun, X ^b   Wang, H ^b   Jiang, D S ^b   Bian, L F ^c   Yang, H ^c  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77955136137     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.125314     Document Type: Article

References (17)

1. B. Heying, E. J. Tarsa, C. R. Elsass, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 85, 6470 (1999). 10.1063/1.370150
2. S. Keller, B. P. Keller, M. S. Minsky, J. E. Bowers, U. K. Mishra, S. P. DenBaars, and W. Seifert, J. Cryst. Growth 189-190, 29 (1998). 10.1016/S0022-0248(98)00150-X
3. R. A. Oliver, M. J. Kappers, and C. J. Humphreys, J. Appl. Phys. 97, 013707 (2005). 10.1063/1.1823581
4. J. E. Northrup, L. T. Romano, and J. Neugebauer, Appl. Phys. Lett. 74, 2319 (1999). 10.1063/1.123837
5. L. T. Song, J. Appl. Phys. 98, 084906 (2005). 10.1063/1.2108148
6. T. Sugahara, M. Hao, T. Wang, D. Nakagawa, Y. Naoi, K. Nishino, and S. Sakai, Jpn. J. Appl. Phys., Part 2 37, L1195 (1998). 10.1143/JJAP.37.L1195
7. A. Kaneta, M. Funato, Y. Narukawa, T. Mukai, and Y. Kawakami, Phys. Status Solidi C 3, 1897 (2006). 10.1002/pssc.200565403
8. H. Sato, T. Sugahara, Y. Naoi, and S. Sakai, Jpn. J. Appl. Phys., Part 1 37, 2013 (1998). 10.1143/JJAP.37.2013
9. J. Wu, W. Walukiewicz, K. M. Yu, W. Shan, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, W. K. Metzger, and S. Kurtz, J. Appl. Phys. 94, 6477 (2003). 10.1063/1.1618353
10. D. M. Follstaedt, N. A. Missert, D. D. Koleske, C. C. Mitchell, and K. C. Cross, Appl. Phys. Lett. 83, 4797 (2003). 10.1063/1.1632540
11. B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, and R. F. Davis, MRS Internet J. Nitride Semicond. Res. 3, 39 (1998).
12. R. Liu, J. Mei, S. Srinivasan, F. A. Ponce, H. Omiya, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 89, 201911 (2006). 10.1063/1.2388895
13. Y. Cui and L. Li, Phys. Rev. B 66, 155330 (2002). 10.1103/PhysRevB.66. 155330
14. S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Phys. Rev. B 65, 075202 (2002), and references therein. 10.1103/PhysRevB.65.075202
15. S. J. Henley and D. Cherns, J. Appl. Phys. 93, 3934 (2003). 10.1063/1.1559417
16. See Ref.. For comparable excitation conditions, the authors estimated a decrease in the CL intensity of an (In,Ga)N/GaN single QW at the position of a TD of about 50% assuming that the dislocation acts as a perfect nonradiative sink for carriers.
17. A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, Phys. Rev. Lett. 95, 127402 (2005). 10.1103/PhysRevLett.95.127402