Ring-opening-induced toughening of a low-permittivity polymer-metal interface

ACS Applied Materials and Interfaces

Volumn 2, Issue 5, 2010, Pages 1275-1280

  Singh, B ^a   Garg, S ^a   Rathore, J ^b   Moore, R ^c   Ravishankar, N ^a,d   Interrante, L ^b   Ramanath, Ganpati ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Rensselaer Polytechnic Institute   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

^d INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Carbosilane; Copper; Interface toughening; Low k; Polymer; Ring opening

Indexed keywords

ACTIVATING METALS; CARBOSILANES; COPPER INTERFACE; DIELECTRIC PERMITTIVITIES; INTERFACE TOUGHENING; INTERFACIAL ADHESIONS; INTERFACIAL FRACTURE TOUGHNESS; INTERFACIAL OXYGEN; LOW DIELECTRIC; MODEL SYSTEM; MOLECULAR RINGS; NEW APPROACHES; POLARIZABILITIES; POLYCARBOSILANES; POLYMER-METAL INTERFACES; POLYMER/METAL STRUCTURE; RING OPENING; TOUGHENING MECHANISMS;

ADHESION; COPPER; FRACTURE TOUGHNESS; METALS; MOLECULAR OXYGEN; MOLECULAR SPECTROSCOPY; PERMITTIVITY; POLYSILANES;

POLYMERS;

COPPER; POLYMER;

CHEMISTRY; HARDNESS; IMPEDANCE; LETTER; MATERIALS; MATERIALS TESTING; SURFACE PROPERTY;

COPPER; ELECTRIC IMPEDANCE; HARDNESS; MANUFACTURED MATERIALS; MATERIALS TESTING; POLYMERS; SURFACE PROPERTIES;

EID: 77955008262     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am1001597     Document Type: Article

References (26)

1. Morgen, M., Ryan, E. T., Zhao, J. H., Hu, C., Cho, T. H., and Ho, P. S. Annu. Rev. Mater. Sci. 2000, 30, 645-680
2. Maex, K., Baklanov, M. R., Shamiryan, D., Iacopi, F., Brongersma, S. H., and Yanovitskaya, Z. S. J. Appl. Phys. 2003, 93, 8793-8841
3. Huo, X., Chen, K. J., and Chan, P. C. H. IEEE Electron Device Lett. 2002, 23, 520-522
4. Spencer, T. J., Osborn, T., and Kohl, P. A. Science 2008, 320, 756-757
5. Grujicic, M., Sellappan, V., Omar, M. A., Seyr, N., Obieglo, A., Erdmann, M., and Holzleitner, J. J. Mater. Process. Technol. 2008, 197, 363-373
6. Guyer, E. P. and Dauskardt, R. H. Nat. Mater. 2004, 3, 53-57
7. Dubois, G., Volksen, W., Magbitang, T., Miller, R. D., Gage, D. M., and Dauskardt, R. H. Adv. Mater. 2007, 19, 3989-3994
8. Kim, S. H., Oh, S. S., Kim, K. B., Kang, D. H., Li, W. M., Haukka, S., and Tuominen, M. Appl. Phys. Lett. 2003, 82, 4486-4488
9. Ramanath, G., Cui, G., Ganesan, P. G., Guo, X., Ellis, A. V., Stukowski, M., Vijayamohanan, K., Doppelt, P., and Lane, M. Appl. Phys. Lett. 2003, 83, 383-385
10. Lane, M., Dauskardt, R. H., Krishna, N., and Hashim, I. J. Mater. Res. 2000, 15, 203-211
11. Rathore, J. S., Interrante, L. V., and Dubois, G. Adv. Funct. Mater. 2008, 18, 4022-4028
12. Wu, Z. Z., Papandrea, J. P., Singh, A. P., Ganesan, P. G., Apple, T., Ramanath, G., and Interrante, L. V. Polym. Prepr. (ACS Div. Polym. Chem.) 2004, 45, 118-119
13. Wang, P. I., Wu, Z. Z., Lu, T. M., and Interrante, L. V. J. Electrochem. Soc. 2006, 153, G267-G271
14. Murarka, S. P., Eizenberg, M., and Sinha, A. K. Interlayer Dielectrics for Semiconductor Technologies; Academic Press: New York, 2003.
15. Wu, Z. Z., Papandrea, J. P., Apple, T., and Interrante, L. V. Macromolecules 2004, 37, 5257-5264
16. Gandhi, D. D., Lane, M., Zhou, Y., Singh, A. P., Nayak, S., Tisch, U., Eizenberg, M., and Ramanath, G. Nature 2007, 447, 299-U2
17. Volinsky, A. A., Moody, N. R., and Gerberich, W. W. Acta Mater. 2002, 50, 441-466
18. Dauskardt, R. H., Lane, M., Ma, Q., and Krishna, N. Eng. Fract. Mech. 1998, 61, 141-162
19. Whelan, C. M., Kinsella, M., Carbonell, L., Ho, H. M., and Maex, K. Microelectron. Eng. 2003, 70, 551-557
20. Laibinis, P. E. and Whitesides, G. M. J. Am. Chem. Soc. 1992, 114, 9022-9028
21. Deroubaix, G. and Marcus, P. Surf. Interface Anal. 1992, 18, 39-46
22. Timoshevskii, V., Ke, Y., Guo, H., and Gall, D. J. Appl. Phys. 2008, 103, 113705-4
23. Liu, H. D., Zhao, Y. P., Ramanath, G., Murarka, S. P., and Wang, G. C. Thin Solids Films 2001, 384, 151-156
24. Wrobel, A. M. and Stanczyk, W. Chem. Mater. 1994, 6, 1766-1770
25. 2-Si bridges.
26. Garg, S., Singh, B., Liu, X., Jain, A., Ravishankar, N., Interrante, L., and Ramanath, G. J. Phys. Chem. Lett. 2010, 1, 336-340