T1 and T2 spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 7, 2010, Pages

  Paik, S Y ^a   Lee, S Y ^a   Baker, W J ^a   McCamey, D R ^a   Boehme, C ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954836939     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.075214     Document Type: Article

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