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Physical Review Letters

Volumn 99, Issue 1, 2007, Pages

Integer quantum hall effect on a six-valley hydrogen-passivated silicon (111) surface

(3) Eng, K a McFarland, R N a Kane, B E a

a LABORATORY FOR PHYSICAL SCIENCES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; HALL EFFECT; HYDROGEN; INTEGER PROGRAMMING; PASSIVATION; SILICON; VACUUM;

FILLING FACTORS; NONINTERACTING ELECTRON THEORY;

QUANTUM THEORY;

EID: 34547365040 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.99.016801 Document Type: Article

Times cited : (66)

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