Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

Applied Physics Letters

Volumn 93, Issue 7, 2008, Pages

  Van Beveren, L H Willems ^a   Huebl, H ^a   McCamey, D R ^a,c   Duty, T ^a,d   Ferguson, A J ^a,e   Clark, R G ^a   Brandt, M S ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c UNIVERSITY OF UTAH   (United States)

^d UNIVERSITY OF QUEENSLAND   (Australia)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRON GAS; ELECTRONS; FIELD EFFECT TRANSISTORS; FREQUENCY MODULATION; MAGNETIC FIELD MEASUREMENT; MAGNETIC FIELDS; MAGNETIC MATERIALS; MAGNETIC RESONANCE; MODULATION; NONMETALS; PHOSPHORUS; RESONANCE; SILICON; SPIN DYNAMICS; TELECOMMUNICATION SYSTEMS; TRANSISTORS; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

BROAD-BAND OPERATION; CONTINUOUS WAVE; ELECTRICALLY DETECTED MAGNETIC RESONANCE; ELECTRON SPINS; HYPERFINE; MICROWAVE-FREQUENCY; MILLI-KELVIN TEMPERATURE; ON CHIPS; PHOSPHORUS DONORS; SPIN-SPIN SCATTERING;

ELECTRON SPIN RESONANCE SPECTROSCOPY;

EID: 50249118134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2960356     Document Type: Article

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