Recombination at silicon dangling bonds

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 132-136

  Boehme, C ^a,b   Friedrich, F ^a   Ehara, T ^a   Lips, K ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b ISHINOMAKI SENSHU UNIVERSITY   (Japan)

Author keywords

Dangling bond; Magnetic resonance; Recombination; Silicon

Indexed keywords

CHEMICAL BONDS; CRYSTALLIZATION; ELLIPSOMETRY; LEAD; MAGNETIC RESONANCE; SECONDARY ION MASS SPECTROMETRY; SILICA; THERMAL EFFECTS; THIN FILM TRANSISTORS;

COULOMB ATTRACTION; DANGLING BONDS; HYDROGENATED MICROCRYSTALLINE SILICON; RECOMBINATION;

SEMICONDUCTING SILICON;

EID: 22944435220     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.050     Document Type: Conference Paper

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