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Volumn 81, Issue 4, 2010, Pages

Resistivity of thin Cu films coated with Ta, Ti, Ru, Al, and Pd barrier layers from first principles

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EID: 77954830121     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.045406     Document Type: Article
Times cited : (71)

References (34)
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    • For the DOS calculations with VASP, we used a supercell consists of a seven-layer (4×4 ) Cu (110 ) periodic atomic structure with one impurity metal atom replacing a Cu atom at the surface layer. The vacuum region in the z direction of the supercell is set to be around 15Å. The four top layers are allowed to relax while the three bottom layers are fixed at the bulk position with a bulk Cu lattice constant 3.61Å, consistent with our LMTO calculations. An energy cutoff of 275 eV is used in the plane-wave basis. The Monkhorst-Pack scheme is adopted for integration of Brillouin zone with a k mesh of 8×8×1. Note that, the VASP calculations are only possible for periodic structures whereas our LMTO calculations are performed treating the Cu film as a two-probe device of specific length.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.