Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 229-235

  Ou, Keng Liang ^a   Yu, Ming Sun ^b   Hsu, Ray Quen ^c   Lin, Ming Hong ^d  

^a TAIPEI MEDICAL UNIVERSITY   (Taiwan)

^b KAOHSIUNG VETERANS GENERAL HOSPITAL   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; CRYSTAL MICROSTRUCTURE; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; PHYSICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; THERMODYNAMIC STABILITY; ULTRATHIN FILMS;

AMORPHOUS STRUCTURES; REACTANTS;

TITANIUM;

EID: 31144433813     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1852466     Document Type: Article

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