Fabrication of Cu(Ti) alloy interconnects with self-formation of thin barrier metal layers using a high-pressure annealing process

Journal of Electronic Materials

Volumn 36, Issue 12, 2007, Pages 1658-1661

  Tsukimoto, S ^a   Onishi, T ^b   Ito, K ^a   Konno, M ^c   Yaguchi, T ^c   Kamino, T ^c   Murakami, M ^a  

^a KYOTO UNIVERSITY   (Japan)

^b KOBE STEEL LTD   (Japan)

^c HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

Barrier layer; Cu Ti alloy; High pressure annealing; Interconnect; Self formation

Indexed keywords

COPPER INTERCONNECTS; THIN BARRIER METAL LAYERS;

ANNEALING; DIFFUSION; HIGH PRESSURE EFFECTS; SILICA; THERMODYNAMIC STABILITY; THICKNESS CONTROL;

COPPER ALLOYS;

EID: 36148957837     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0274-6     Document Type: Article

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