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Applied Physics Letters

Volumn 96, Issue 3, 2010, Pages

Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

(6) Li, T a Fischer, A M a Wei, Q Y a Ponce, F A a Detchprohm, T b Wetzel, C b

a ARIZONA STATE UNIVERSITY (United States)

b RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; INGAN QUANTUM WELLS; INTERNAL QUANTUM EFFICIENCY; LOCALIZATION EFFECT; LONG-WAVELENGTH EMISSIONS; NON-LOCALIZED; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE RECOMBINATION CENTERS; PEAK EMISSIONS; RADIATIVE RECOMBINATION; TIME-RESOLVED; VISIBLE SPECTRA;

ACTIVATION ENERGY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 77949799332 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3293298 Document Type: Article

Times cited : (59)

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