Optical and microstructural studies of InGaN/GaN quantum dot ensembles

Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

  Davies, S C ^a   Mowbray, D J ^a   Ranalli, F ^a   Parbrook, P J ^a,c   Wang, Q ^a   Wang, T ^a   Yea, B S ^b   Sherliker, B J ^b   Halsall, M P ^b   Kashtiban, R J ^b   Bangert, U ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; DEPOSITION TIME; EMISSION CHANGE; INGAN/GAN; MICRO-STRUCTURAL; PHOTOLUMINESCENCE EXCITATION SPECTRUM; QUANTUM DOT ENSEMBLE; QUANTUM DOTS; RED SHIFT; STRUCTURAL MEASUREMENTS; STRUCTURAL STUDIES; WETTING LAYER;

CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349512346     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3226645     Document Type: Article

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