Epitaxially-grown Ge/Si avalanche photodiodes for 1.3μm light detection

Optics Express

Volumn 16, Issue 13, 2008, Pages 9365-9371

  Kang, Y ^a   Zadka, M ^b   Litski, S ^b   Sarid, G ^b   Morse, M ^a   Paniccia, M J ^a   Kuo, Y H ^c   Bowers, J ^c   Beling, A ^d   Liu, H D ^e   Mcintosh, D C ^e   Campbell, J ^d   Pauchard, A ^e  

^a INTEL CORPORATION   (United States)

^b Intel Electronics Ltd   (Israel)

^c University of California   (United States)

^d UNIVERSITY OF VIRGINIA   (United States)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE PHOTODIODES; BANDWIDTH; GERMANIUM;

3 DB BANDWIDTH; EPITAXIALLY GROWN; EXCESS NOISE FACTOR; GAIN-BANDWIDTH PRODUCTS; LIGHT DETECTION; RESPONSIVITY; SILICON SUBSTRATES; THERMAL COEFFICIENTS;

PHOTODIODES;

GERMANIUM; SILICON;

ARTICLE; CHEMISTRY; COMPUTER SIMULATION; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; METHODOLOGY; PHOTOMETRY; RADIATION SCATTERING; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; THEORETICAL MODEL;

COMPUTER SIMULATION; CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GERMANIUM; LIGHT; MODELS, THEORETICAL; PHOTOMETRY; SCATTERING, RADIATION; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY; SILICON;

EID: 46149096483     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.009365     Document Type: Article

References (20)

1. F. Capasso, W.T. Tsang, A.L. Hutchinson, and G.F. Williams, "The superlattice photodetector a new avalanche photodiode with a large ionization rates ratio," Tech. Dig. Int. Electron Devices Meet. 284-287, (1981).
2. S. Wang, R. Sidhu, X.G. Zheng, X. Li, X. Sun, A.L. Holmes, Jr., and J.C. Campbell, "Low-noise avalanche photodiodes with graded impact-ionization- engineered multiplication region," IEEE Photon. Technol. Lett. 13, 1346-1348 (2001).
3. J.C. Campbell, H. Nie, C. Lenox, G. Kinsey, P. Yuan, A.L. Holmes and B.G. Streetman, "High-speed, low-noise avalanche photodiodes," Optical Fiber Communication Conference, Technical Digest Postconference Edition, 37, 114-116 (2000).
4. R.P. Webb, R.J. McIntyre, and J. Conradi, "Properties of avalanche photodiodes," RCA Rev. 35, 234-278 (1974).
5. A.R. Hawkins, W. Wu, P. Abraham, K. Streubel, and J.E. Bowers, "High Gain-Bandwidth-Product Silicon Heterointerface Photodetector," Appl. Phys. Lett. 70, 303-305 (1996).
6. Y. Kang, P. Mages, A.R. Clawson, P.K.L. Yu, M. Bitter, Z. Pan, A. Pauchard, S. Hummel, and Y.H. Lo, "Fused InGaAs/Si Avalanche Phototodiodes With Low noise Performance," IEEE Photon. Technol. Lett. 14, 1593-1595 (2002).
7. M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, "Performance of Ge-on-Si p-i-n Photodetectors for Standard Receiver Modules," Proceeding of SiGe and Ge: Materials, Processing, and Devices, Vol.3, No.7, 75-84 (2006).
8. Z. Huang, N. Kong, X. Guo, M. Liu, N. Duan, A. L. Beck, S. K. Banerjee, and J.C. Campbell, "21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers," IEEE J. Sel. Top. in Quantum Electron. 12, 1450-1454 (2006).
9. R.G. Smith and S.R. Forrest, "Sensitivity of avalanche photodetector receivers for long-wavelength optical communications," Bell. System Tech. J. 61, 2929-2945 (1982).
10. T.R. Refaat, M.N. Abedin and U.N. Singh, "Comparison between Ge and InGaAs APDs in the 1 to 2 μm wavelength range," Proceeding of 2005 Quantum Electronics and Laser Science Conference (QELS), 1997-1999 (2005).
11. Z. Huang, J. Oh, Banerjee, S.K. Banerjee and J.C. Campbell "Effectiveness of SiGe buffer layers in reducing dark currents of Ge-on-Si photodetectors," IEEE J. Quantum Electron. 43, 238-242 (2007).
12. C.L.F. Ma, M.J. Dean, L.E. Tarof, and J.C.H. Yu, "Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes," IEEE Trans. Electron. Devices. 42, 810-818 (1995).
13. K.-S. Hyun, and C. -Y. Park, "Breakdown characteristics in InPAInGaAs avalanche photodiode with p-i-n multiplication layer structure," J. Appl. Phys. 81, 974-984 (1997).
14. M.Ershov, and V.Ryzhii "Temperature dependence of the electron impact ionization coefficient in silicon," Semiconductor Science and Technol. 10, 138-42 (1995).
15. Y.K. Su, C.Y. Chang and T.S. Wu, "Temperature dependent characteristics of a PIN avalanche photodiode(APD) in Ge, Si and GaAs," Opt. Quantum Electron. 11, 109-117 (1979).
16. D.J. Massey, J.P.R. David and G.J. Rees, "Temperature dependence of impact ionization in submicrometer silicon devices," IEEE Trans. Electron. Devices 53, 2328-2334 (2006).
17. R. J. McIntyre, "The distribution of gains in uniformly multiplying avalanche photodiodes: theory," IEEE Trans. Electron. Devices ED-19, 703-713 (1972).
18. J.C. Campbell, S. Chandrasekhar, W.T. Tsang, G.J. Qua and B.C. Johnson, "Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes," J. Lightwave Technol. 7, 473-478 (1989).
19. 0.52As, " IEEE Electron. Device Lett. 11, 437-438 (1990).
20. R.B. Emmons, "Avalanche-photodiode frequency response," J. Appl. Phys. 38, 3705-3714 (1967).