Cross-sectional transmission electron microscopy study of Si/SiGe heterojunction bipolar transistor structure grown by ultra-high vacuum chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 7 B, 1997, Pages

  Zhang, Jinshu ^a   Jin, Xiaojun ^a   Tsien, Pei Hsin ^a   Lo, Tai Chin ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SILICON; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031189459     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l903     Document Type: Article

References (9)