Germanium-silicon separate absorption and multiplication avalanche photodetectors fabricated with low temperature high density plasma chemical vapor deposited germanium

Materials Research Society Symposium Proceedings

Volumn 989, Issue , 2007, Pages 293-298

  Carroll, Malcolm ^a   Childs, Kent ^a   Serkland, Darwin ^a   Jarecki, Robert ^a   Bauer, Todd ^a   Saiz, Kevin ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRON TUNNELING; EPITAXIAL GROWTH; GERMANIUM COMPOUNDS; INTERFACES (MATERIALS); LIGHT ABSORPTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AVALANCHE BREAKDOWN; AVALANCHE PHOTODETECTORS; PHOTOCURRENT MULTIPLICATION;

AVALANCHE PHOTODIODES;

EID: 41549164029     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0989-a12-05     Document Type: Conference Paper

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