Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers

Applied Physics Letters

Volumn 85, Issue 17, 2004, Pages 3731-3733

  Tong, Q Y ^a   Gan, Q ^a,c,d   Fountain, G ^a   Enquist, P ^a   Scholz, R ^b   Gosele U ^b  

^a Ziptronix Inc   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c RTI INTERNATIONAL   (United States)

^d Skyworks Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HNO3; PLASMA TREATMENT; ROOM TEMPERATURE; THERMAL SENSITIVITY;

ABSORPTION; ANNEALING; BONDING; FABRICATION; FLUORINE; IONIZATION; THERMOANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON WAFERS;

EID: 9744239531     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1809279     Document Type: Article

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