High-frequency measurements on InAs nanowire field-effect transistors using coplanar waveguide contacts

IEEE Transactions on Nanotechnology

Volumn 9, Issue 4, 2010, Pages 432-437

  Blekker, Kai ^a   Münstermann, Benjamin ^a   Matiss, Andreas ^b   Do, Quoc Thai ^c   Regolin, Ingo ^a   Brockerhoff, Wolfgang ^a   Prost, Werner ^a   Tegude, Franz Josef ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b U2T PHOTONICS AG   (Germany)

^c Siltronic   (Germany)

Author keywords

Gate length scaling; high frequency characterization; InAs nanowire FET

Indexed keywords

ANALYTICAL MODEL; CONTACT STRUCTURE; DE-EMBEDDING; DEVICE PERFORMANCE; GATE LENGTH; GATE LENGTH SCALING; HIGH FREQUENCY MEASUREMENTS; HIGH-FREQUENCY CHARACTERIZATION; INAS; INAS NANOWIRE FIELD-EFFECT TRANSISTORS; INTRINSIC DEVICE; MAXIMUM OSCILLATION FREQUENCY; MAXIMUM STABLE GAIN; NANOWIRE FET; NANOWIRE TRANSISTORS; ON-WAFER; PARASITIC ELEMENT;

COPLANAR WAVEGUIDES; ELECTRIC FREQUENCY MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; MESFET DEVICES; NANOWIRES; SEMICONDUCTING INDIUM;

FIELD EFFECT TRANSISTORS;

EID: 77954578830     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2032917     Document Type: Article

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