Coplanar contact pattern for single InAs nanowire FET

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2008, Pages 181-182

  Blekker, K ^a   Matiss, A ^a   Munstermann B ^a   Regolin, I ^a   Li, B ^a   Do, Q T ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 64849094776     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2008.4800793     Document Type: Conference Paper

References (2)

1. T. Bryllert, L.-E. Wernersson, L.E. Froberg, L. Samuelson,"Vertical high-mobility wrap-gated InAs nanowire Transistor," IEEE Electron Device Letters, vol. 27, pp. 323-325, 2005.
2. Q.-T. Do, K. Blekker, I. Regolin, W. Prost, and F.-J. Tegude, "High Transconductance MISFET With a Single InAs Nanowire Channel", IEEE Electron Device Letters, vol.28, no.8, pp. 682-684, August 2007.