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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1190-1194

Impact ionization effects on the microwave performance of InAs channel heterostructure field-effect transistors the role of channel quantization

(3) Bolognesi, Colombo R a Dvorak, Martin W a Chow, David H b

a SIMON FRASER UNIVERSITY (Canada)

b Hughes Aircraft Co (United States)

Author keywords

Confinement; HFET; Impact ionization; Quantization

Indexed keywords

ENERGY GAP; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; IMPACT IONIZATION; MATHEMATICAL MODELS; MESFET DEVICES; MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CHANNEL QUANTIZATION; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; QUANTUM CONFINEMENT;

FIELD EFFECT TRANSISTORS;

EID: 0032669879 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1190 Document Type: Article

Times cited : (7)

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