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Volumn 247, Issue 7, 2010, Pages 1778-1785

Shallow-donor impurity in coupled GaAs/Ga1-xAlxAs quantum well wires: Hydrostatic pressure and applied electric field effects

Author keywords

III V semiconductor; Pressure effects; Quantum well wires

Indexed keywords


EID: 77954572698     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200945519     Document Type: Article
Times cited : (7)

References (53)
  • 47
    • 77954580641 scopus 로고    scopus 로고
    • We refer the reader to this work for details of the calculation of f(x)
    • We refer the reader to this work for details of the calculation of f(x)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.