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Volumn 244, Issue 6, 2007, Pages 1964-1970

Hydrostatic pressure effects on the Γ-X conduction band mixing and the binding energy of a donor impurity in GaAs-Ga1-xAlxAs quantum wells

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EID: 34250320167     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200642377     Document Type: Article
Times cited : (30)

References (21)
  • 8
    • 0041740343 scopus 로고    scopus 로고
    • D. Wang, E. A. de Andrada e Silva, and I. C. da Cunha Lima, Phys. Rev. B 46, 7304 (1992).
    • D. Wang, E. A. de Andrada e Silva, and I. C. da Cunha Lima, Phys. Rev. B 46, 7304 (1992).
  • 18
    • 34250361350 scopus 로고    scopus 로고
    • S. Y. Lopez, N. Porras-Montenegro, and C. A. Duque, phys. stat. sol. (c) 0, 648 (2003).
    • S. Y. Lopez, N. Porras-Montenegro, and C. A. Duque, phys. stat. sol. (c) 0, 648 (2003).
  • 21
    • 34250369122 scopus 로고    scopus 로고
    • The photoluminescence peak energy is defined as the sum between the first confined state for electron in the conduction band plus the first confined state for the heavy hole in the valence band plus the GaAs band gap at zero hydrostatic pressure
    • The photoluminescence peak energy is defined as the sum between the first confined state for electron in the conduction band plus the first confined state for the heavy hole in the valence band plus the GaAs band gap at zero hydrostatic pressure.


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