Spatially indirect excitons in GaAs/Al0.35Ga0.65As double quantum wells in the presence of in-plane magnetic fields

Physica Status Solidi (A) Applied Research

Volumn 178, Issue 1, 2000, Pages 45-49

  Parlangeli, A ^a   Christianen, P C M ^a   Maan, J C ^a   Soerensen, C B ^b   Lindelof, P E ^b  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DIAMAGNETISM; EXCITONS; MAGNETIC FIELD EFFECTS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0033747567     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200003)178:1<45::AID-PSSA45>3.0.CO;2-4     Document Type: Article

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