The influence of compressive stress on shallow-donor impurity states in symmetric GaAs-Ga1-xAlxAs double quantum dots

Journal of Applied Physics

Volumn 101, Issue 7, 2007, Pages

  Liu, Jian Jun ^a   Shen, Man ^a   Wang, Shao Wei ^a  

^a HEBEI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; COMPRESSIVE STRESS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; WAVE FUNCTIONS;

BARRIER WIDTHS; EFFECTIVE-MASS APPROXIMATION; SHALLOW-DONOR IMPURITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34247236716     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2717584     Document Type: Article

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