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Volumn 18, Issue 7, 2003, Pages 718-722

Binding energy and density of shallow impurity states in GaAs-(Ga, Al)As quantum wells: Effects of an applied hydrostatic stress

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; CALCULATIONS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRONIC DENSITY OF STATES; HAMILTONIANS; HYDROSTATIC PRESSURE; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; STRESSES; VARIATIONAL TECHNIQUES;

EID: 0037811254     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/7/322     Document Type: Article
Times cited : (31)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.