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Volumn 18, Issue 7, 2003, Pages 718-722
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Binding energy and density of shallow impurity states in GaAs-(Ga, Al)As quantum wells: Effects of an applied hydrostatic stress
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Author keywords
[No Author keywords available]
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Indexed keywords
APPROXIMATION THEORY;
BINDING ENERGY;
CALCULATIONS;
EIGENVALUES AND EIGENFUNCTIONS;
ELECTRONIC DENSITY OF STATES;
HAMILTONIANS;
HYDROSTATIC PRESSURE;
PRESSURE EFFECTS;
SEMICONDUCTING GALLIUM ARSENIDE;
STRESSES;
VARIATIONAL TECHNIQUES;
EFFECTIVE-MASS APPROXIMATION;
HYDROSTATIC STRESS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0037811254
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/18/7/322 Document Type: Article |
Times cited : (31)
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References (26)
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