Hydrostatic pressure effects on donor-related absorption spectra in GaAs-Ga1-xAlxAs quantum wells

Physica B: Condensed Matter

Volumn 362, Issue 1-4, 2005, Pages 41-49

  Lopez S Y ^a   Porras Montenegro, N ^b   Duque, C A ^a  

^a UNIVERSIDAD DE ANTIOQUIA   (Colombia)

^b UNIVERSIDAD DEL VALLE   (Colombia)

Author keywords

Binding energy; Hydrostatic stress effects; Quantum well; Shallow donors

Indexed keywords

BINDING ENERGY; HYDROSTATIC PRESSURE; LIGHT ABSORPTION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

DONOR IMPURITY STATES; HYDROSTATIC STRESS EFFECTS; PHOTOREFLECTANCE (PR); SHALLOW DONORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 17844402259     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.01.473     Document Type: Article

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