Effects of hydrostatic pressure and applied electric fields on the exciton states in GaAs - (Ga,Al)As quantum wells

Physica B: Condensed Matter

Volumn 367, Issue 1-4, 2005, Pages 267-274

  Raigoza, N ^a   Duque, C A ^a   Reyes Gomez E ^b   Oliveira, L E ^c  

^a UNIVERSIDAD DE ANTIOQUIA   (Colombia)

^b UNIVERSITY OF HAVANA   (Cuba)

^c UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

Exciton states; Quantum wells GaAs (Ga,Al)As

Indexed keywords

APPROXIMATION THEORY; EXCITONS; HYDROSTATIC PRESSURE; SEMICONDUCTING GALLIUM ARSENIDE;

EXCITON STATES; QUANTUM WELLS GAAS - (GA,AL)AS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 28844440386     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.06.027     Document Type: Article

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