Effects of electric field on electronic states in a GaAs/GaAlAs quantum dot with different confinements

Chinese Physics Letters

Volumn 25, Issue 8, 2008, Pages 3021-3024

  Peter, A John ^a   Lakshminarayana, Vemuri ^b  

^a Government Arts College   (India)

^b MOHAMED SATHAK ENGINEERING COLLEGE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRIC FIELDS; ENERGY GAP; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; NANOCRYSTALS; SEMICONDUCTING GALLIUM;

DIELECTRIC FUNCTIONS; DONOR IMPURITIES; EFFECTIVE MASS APPROXIMATION; EFFECTS OF ELECTRIC FIELDS; HYDROGENIC IMPURITIES; IMPURITIES IN; PARABOLIC CONFINEMENTS; PARABOLICS; POTENTIAL WELLS; SCREENING EFFECT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 49749150491     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/8/077     Document Type: Article

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