The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1 - xAlxAs double quantum well under the external fields

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 373, Issue 1, 2008, Pages 140-143

  Kasapoglu, E ^a  

^a CUMHURIYET UNIVERSITY   (Turkey)

Author keywords

Donor impurities; Double quantum well; Electric and magnetic fields; Hydrostatic pressure; Temperature

Indexed keywords

BINDING ENERGY; GALLIUM ARSENIDE; HYDRAULICS; HYDROSTATIC PRESSURE; III-V SEMICONDUCTORS; MAGNETIC FIELD EFFECTS; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM; TEMPERATURE; VARIATIONAL TECHNIQUES;

COMBINED EFFECT; DONOR IMPURITIES; DOUBLE QUANTUM WELL; EFFECTIVE MASS APPROXIMATION; ELECTRIC AND MAGNETIC FIELDS; EXTERNAL FIELDS; GROWTH DIRECTIONS; PRESSURE AND TEMPERATURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 56449098720     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.10.080     Document Type: Article

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