Stress effects on the binding energy of shallow-donor impurities in symmetrical GaAs/AlGaAs double quantum-well wires

Journal of Physics Condensed Matter

Volumn 19, Issue 34, 2007, Pages

  Bai, Zhan Guo ^a,b   Liu, Jian Jun ^a  

^a HEBEI NORMAL UNIVERSITY   (China)

^b HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER WIDTHS; CONFINEMENT POTENTIAL; DOUBLE QUANTUM-WELL; EFFECTIVE MASS APPROXIMATION; ENERGY INCREASE; GAAS/ALGAAS; GROWTH DIRECTIONS; IMAGE-CHARGE EFFECTS; IMPURITIES IN; IMPURITY STATE; NONLINEAR BEHAVIOR; STRESS EFFECTS; STRESS VALUES;

COMPRESSIVE STRESS; IMPURITIES; POTENTIAL ENERGY; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRESS; WIRE;

BINDING ENERGY;

EID: 74349090219     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/34/346218     Document Type: Article

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