Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction

Semiconductor Science and Technology

Volumn 24, Issue 12, 2009, Pages

  Liu, J Q ^a,b,c   Wang, J F ^a   Qiu, Y X ^a   Guo, X ^b   Huang, K ^a   Zhang, Y M ^a   Hu, X J ^a   Xu, Y ^a   Xu, K ^a   Huang, X H ^a,b,c   Yang, H ^a  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURVED SAMPLE; GAN EPILAYERS; GAN LAYERS; GRAZING INCIDENCE; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; IN-PLANE DIFFRACTION; PEAK BROADENING; SKEW GEOMETRY; TILT ANGLE; TWIST ANGLES; WAFER CURVATURE; WILLIAMSON-HALL PLOT; X RAY ROCKING CURVE;

GALLIUM NITRIDE; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 77954326476     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/12/125007     Document Type: Article

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