Comparing the IR spectra of H-terminated inner and outer silicon surfaces

Surface and Interface Analysis

Volumn 42, Issue 6-7, 2010, Pages 1321-1325

  Romano, E ^a   Cerofolini, G F ^a   Narducci, D ^a   Galati, C ^b   Renna, L ^b  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Hydrogen injection via HF solution; MIR infrared spectroscopy; Nanocavities in silicon; Second derivative method; Si H stretching modes; Surface homogeneity

Indexed keywords

HF SOLUTIONS; HYDROGEN INJECTION; MIR INFRARED SPECTROSCOPY; NANO-CAVITIES; SECOND DERIVATIVE METHOD; SECOND DERIVATIVES; STRETCHING MODES; SURFACE HOMOGENEITY;

ELECTRON ENERGY LEVELS; FUEL INJECTION; HYDROGEN; SILICON;

INFRARED SPECTROSCOPY;

EID: 77954245255     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3381     Document Type: Conference Paper

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