Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 173-176

  Romano, E ^a   Narducci, D ^a   Corni, F ^b   Frabboni, S ^b   Ottaviani, G ^b   Tonini, R ^b   Cerofolini, G F ^a,c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Hydrogen implantation; Infrared spectroscopy; Nanocavities; Nanosieves; Silicon

Indexed keywords

DANGLING BONDS; HEAT TREATMENT; PASSIVATION; SILICON; SILICON COMPOUNDS; SURFACE DEFECTS;

HYDROGEN IMPLANTATION; INFRARED: SPECTROSCOPY; INNER SURFACES; INTERNAL SURFACES; NANO-CAVITIES; NANOSIEVE; SI (1 1 1); SILICON VIA; SURFACES RECONSTRUCTION; TETRAKAIDECAHEDRON;

INFRARED SPECTROSCOPY;

EID: 67349276615     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.05.012     Document Type: Article

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